onsemi NTTFD4D0N04HL & NTTFD9D0N06HL N-Channel MOSFETs
onsemi NTTFD4D0N04HL and NTTFD9D0N06HL N-Channel MOSFETs are POWERTRENCH® power clip symmetric dual-channel MOSFETs in a WQFN12 package. These devices include two specialized N-Channel MOSFETs in a dual package. The switch node is internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous MOSFET (Q1) are designed to provide optimal power efficiency. onsemi NTTFD4D0N04HL and NTTFD9D0N06HL N-Channel MOSFETs offer low RDS(on), low QG and capacitance, and low conduction/driver losses. Typical applications include DC-DC converters, general-purpose point of load, single-phase motor drives, computing, and communicationsFeatures
- 3mm x 3mm WQFN12 package
- Configured as a half-bridge to reduce package parasitics
- Low RDS(on)
- Minimizes conduction losses
- Low Qg and capacitance
- Minimize driver losses
Applications
- Computing
- Communications
- General-purpose point of load
- DC-DC converters
- Single-phase motor drives
- DC-DC modules
Specifications
- NTTFD4D0N04HL
- Q1: N-Channel
- 4.5mΩ max RDS(on) at 10V VGS, 10A ID
- 7mΩ max RDS(on) at 4.5V VGS, 8A ID
- Q2: N-Channel
- 4.5mΩ max RDS(on) at 10V VGS, 10A ID
- 7mΩ max RDS(on) at 4.5V VGS, 8A ID
- Q1: N-Channel
- NTTFD9D0N06HL
- Q1: N-Channel
- 9mΩ max RDS(on) at 10V VGS, 10A ID
- 13mΩ max RDS(on) at 4.5V VGS, 8A ID
- Q2: N-Channel
- 9mΩ max RDS(on) at 10V VGS, 10A ID
- 13mΩ max RDS(on) at 4.5V VGS, 8A ID
- Q1: N-Channel
Electrical Connections
View Results ( 2 ) Page
| N.º de artículo | Hoja de datos | Descripción |
|---|---|---|
| NTTFD4D0N04HLTWG | ![]() |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET, Power, 40V POWERTRENCH Power Clip Half Bridge Configuration |
| NTTFD9D0N06HLTWG | ![]() |
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET, Power, 60V POWERTRENCH Power Clip Half Bridge Configuration |
Publicado: 2020-08-02
| Actualizado: 2024-06-12

