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Nexperia BSH205G2 20V P-Channel Trench MOSFET

Nexperia BSH205G2 20V P-Channel Trench MOSFET is an enhancement mode field-effect transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. The device employs Trench MOSFET technology and offers a low threshold voltage with very fast switching. The BSH205G2 MOSFET is ideal for applications like relay drivers, high-speed line drivers and switching circuits.

The Nexperia BSH205G2 20V P-Channel Trench MOSFET is AEC-Q101 qualified and suitable for use in automotive applications.

Features

  • AEC-Q101 qualified
  • Enhanced power dissipation capability of 890mW
  • Trench MOSFET technology
  • Low on-state resistance
  • Low threshold voltage
  • -55°C to 150°C ambient temperature range
  • SOT23 (TO-236AB) package

Applications

  • Relay driver
  • High-speed line driver
  • High-side loadswitch
  • Switching circuits

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Package Outline

Mechanical Drawing - Nexperia BSH205G2 20V P-Channel Trench MOSFET

Videos

Additional Resources

View Results ( 3 ) Page
N.º de artículo Hoja de datos Vgs th - Tensión umbral entre puerta y fuente Id - Corriente de drenaje continua Temperatura de trabajo máxima
BSH205G2AR BSH205G2AR Hoja de datos 900 mV 2.6 A + 175 C
BSH205G2R BSH205G2R Hoja de datos 450 mV 2.3 A + 150 C
BSH205G2VL BSH205G2VL Hoja de datos 950 mV 2.3 A + 150 C
Publicado: 2015-03-10 | Actualizado: 2022-11-28