ROHM Semiconductor RFN10BGE3STL Super Fast Recovery Diode
ROHM Semiconductor RFN10BGE3STL Super Fast Recovery Diode features silicon epitaxial planar construction with high current overload capacity and low switching loss. This superfast recovery diode is stored at -55°C to 150°C temperature range and offers 350V repetitive peak reverse voltage. The RFN10BGE3STL diode functions at 10A average rectified forward current, 1.5V maximum forward voltage, 10μA maximum reverse current, and 150°C junction temperature. This diode is ideal for use in general rectification.
Features
- Silicon epitaxial planar construction type
- High current overload capacity
- Low switching loss
- -55°C to 150°C storage temperature range
- 350V repetitive peak reverse voltage
- 10A average rectified forward current
- 1.5V maximum forward voltage
- 10μA maximum reverse current
- 150°C junction temperature
Mechanical Drawing
Publicado: 2021-02-23
| Actualizado: 2022-03-11