N-Channel OptiMOS™ Power MOSFETs

Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Resultados: 68
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Calificación Nombre comercial Empaquetado
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS-T2 9.286En existencias
Cinta cortada
$4.443
$2.256
$2.039
$1.675
Envase tipo carrete
$1.572
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 180 A 1.3 mOhms 20 V 3 V 135 nC - 55 C + 175 C 188 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 180A D2PAK-6 OptiMOS 3 1.138En existencias
Cinta cortada
$9.023
$6.038
$4.853
$4.318
Envase tipo carrete
$3.862
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 120 V 180 A 2.9 mOhms 20 V 2 V 211 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2 OptiMOS 3 3.517En existencias
Cinta cortada
$7.861
$5.150
$3.794
$3.372
Envase tipo carrete
$3.019
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 120 A 2.3 mOhms 20 V 2 V 206 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS-T2 976En existencias
Cinta cortada
$5.058
$3.315
$2.472
$2.073
Envase tipo carrete
$1.811
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 180 A 900 uOhms 20 V 2 V 225 nC - 55 C + 175 C 250 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 180A D2PAK-6 OptiMOS 3 1.646En existencias
Cinta cortada
$6.870
$4.500
$3.315
$2.951
Envase tipo carrete
$2.632
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 180 A 1.2 mOhms 20 V 1.2 V 166 nC - 55 C + 175 C 250 W Enhancement OptiMOS Reel, Cut Tape, MouseReel

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90mA SOT-23-3 59.674En existencias
Cinta cortada
$991
$684
$433
$268
Envase tipo carrete
$172
Ver
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SOT-23-3 N-Channel 1 Channel 100 V 170 mA 2.9 Ohms 20 V 2.9 V 2.1 nC - 55 C + 150 C 360 mW Depletion AEC-Q100 Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 120A D2PAK-2 OptiMOS 3 4.609En existencias
Cinta cortada
$6.984
$5.252
$4.227
$3.760
Envase tipo carrete
$3.361
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 120 V 120 A 3.2 mOhms 20 V 2 V 211 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A D2PAK-2 3.834En existencias
Cinta cortada
$12.054
$8.522
$7.098
$6.323
Envase tipo carrete
$5.981
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 88 A 9.6 mOhms 20 V 2 V 87 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS 3 1.740En existencias
Cinta cortada
$4.375
$2.860
$2.085
$1.743
Envase tipo carrete
$1.606
$1.515
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 180 A 800 uOhms 20 V 1.2 V 346 nC - 55 C + 175 C 250 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 120A D2PAK-2 OptiMOS-T2 698En existencias
Cinta cortada
$4.386
$2.222
$2.005
$1.641
Envase tipo carrete
$1.538
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 120 A 2 mOhms 20 V 3 V 176 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A D2PAK-2 OptiMOS-T2 969En existencias
Cinta cortada
$3.737
$1.868
$1.686
$1.367
Envase tipo carrete
$1.253
$1.242
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 90 A 2.1 mOhms 20 V 3 V 91 nC - 55 C + 175 C 150 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 80A D2PAK-2 OptiMOS-T2 1.453En existencias
Cinta cortada
$2.814
$1.379
$1.196
$987
Envase tipo carrete
$878
$849
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 80 A 4.2 mOhms 20 V 3 V 33 nC - 55 C + 175 C 71 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS-T2 979En existencias
Cinta cortada
$6.152
$4.033
$3.008
$2.518
Envase tipo carrete
$2.324
$2.199
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 180 A 800 uOhms 20 V 2 V 286 nC - 55 C + 175 C 300 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 70A D2PAK-2 OptiMOS-T 700En existencias
Cinta cortada
$4.534
$2.962
$2.153
$1.811
Envase tipo carrete
$1.663
$1.584
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 100 V 70 A 9.4 mOhms 20 V 2 V 66 nC - 55 C + 175 C 125 W Enhancement AEC-Q100 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A D2PAK-2 OptiMOS 3 821En existencias
Cinta cortada
$3.942
$2.552
$1.766
$1.481
Envase tipo carrete
$1.356
$1.287
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 90 A 3 mOhms 20 V 2 V 98 nC - 55 C + 175 C 188 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250V 64A D2PAK-2 OptiMOS 3 13.936En existencias
Cinta cortada
$9.114
$6.426
$5.195
$4.614
Envase tipo carrete
$4.136
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 64 A 17.5 mOhms 20 V 2 V 86 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 4.400En existencias
$3.406
$1.732
$1.515
$1.185
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 24.8 A 450 mOhms 20 V 3 V 47.2 nC - 40 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 180A D2PAK-6 OptiMOS 3 4.053En existencias
Cinta cortada
$7.200
$4.717
$3.475
$3.144
Envase tipo carrete
$2.757
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 180 A 2 mOhms 20 V 2 V 206 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3 3.013En existencias
Cinta cortada
$2.848
$1.572
$1.219
$985
Envase tipo carrete
$882
Ver
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 60 V 50 A 9 mOhms 20 V 3 V 36 nC - 55 C + 175 C 71 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V) 4.243En existencias
Cinta cortada
$4.477
$2.267
$2.051
$1.686
Envase tipo carrete
$1.584
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-3 P-Channel 1 Channel 40 V 120 A 2.9 mOhms - 16 V, 5 V 3 V 158 nC - 55 C + 175 C 136 W Enhancement Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 250V 17A D2PAK-2 1.620En existencias
Cinta cortada
$3.874
$2.518
$1.743
$1.504
Envase tipo carrete
$1.265
$1.253
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 17 A 100 mOhms 20 V 2 V 14 nC - 55 C + 175 C 107 W Enhancement AEC-Q100 Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V) 5.962En existencias
Cinta cortada
$5.150
$2.734
$2.472
$1.982
Envase tipo carrete
$1.880
$1.846
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263-7 P-Channel 1 Channel 40 V 180 A 2.6 mOhms - 16 V, 5 V 1.7 V 220 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 34A D2PAK-2 OptiMOS 3 5.542En existencias
Cinta cortada
$4.671
$3.053
$2.222
$1.937
Envase tipo carrete
$1.629
$1.606
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 34 A 28 mOhms 20 V 2 V 29 nC - 55 C + 175 C 136 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY 1.000En existencias
Cinta cortada
$5.412
$2.791
$2.529
$2.176
Envase tipo carrete
$2.051
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 22.4 A 351 mOhms 20 V 4 V 86 nC - 55 C + 150 C 195.3 W Enhancement Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V) 2.955En existencias
Cinta cortada
$4.717
$2.404
$2.176
$1.960
Envase tipo carrete
$1.800
$1.709
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 40 V 80 A 3.2 mOhms 20 V 3 V 103 nC - 55 C + 175 C 300 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel