MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Resultados: 35
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial Empaquetado
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.195 Ohm typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 7.581En existencias
Cinta cortada
$5.036
$2.575
$2.336
$1.948
Ver
Envase tipo carrete
$1.868
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 15 A 195 mOhms 25 V 3 V 29 nC - 55 C + 150 C 125 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package 2.760En existencias
$7.291
$3.851
$3.520
$3.361
$3.008
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag 568En existencias
$13.819
$8.374
$7.770
$7.029
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 58 mOhms 25 V 3 V 88 nC - 55 C + 150 C 360 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in D2PAK package 848En existencias
Cinta cortada
$6.790
$3.566
$3.258
$2.962
Envase tipo carrete
$2.791
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 24 A 130 mOhms 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package 564En existencias
Cinta cortada
$8.077
$5.161
$3.896
$3.463
Envase tipo carrete
$3.167
$3.099
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 28 A 110 mOhms 25 V 3 V 54 nC - 55 C + 150 C 210 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package 3.052En existencias
Cinta cortada
$2.814
$1.379
$1.242
$984
$931
Envase tipo carrete
$846
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 11 A 310 mOhms 25 V 3 V 19 nC - 55 C + 150 C 110 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP packag 1.740En existencias
$2.700
$1.310
$1.185
$938
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 8 A 440 mOhms 25 V 3 V 15 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP packa 518En existencias
$7.360
$3.896
$3.566
$3.110
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 28 A 110 mOhms 25 V 3 V 54 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.115 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 1.380En existencias
Cinta cortada
$6.722
$3.532
$3.224
$2.917
$2.757
Envase tipo carrete
$2.757
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT PowerFLAT-8x8-5 N-Channel 1 Channel 600 V 21 A 115 mOhms 25 V 3 V 43 nC - 55 C + 150 C 150 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag 1.022En existencias
$4.398
$2.506
$2.005
$1.686
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 175 mOhms 25 V 3 V 29 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package 1.078En existencias
Cinta cortada
$2.848
$1.390
$1.253
$998
$968
Envase tipo carrete
$860
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 11 A 350 mOhms 25 V 4 V 120 nC - 55 C + 150 C 110 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220FP packag 1.240En existencias
$7.428
$3.942
$3.600
$3.144
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 93 mOhms 25 V 3 V 56 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6 1.985En existencias
Cinta cortada
$3.395
$1.686
$1.515
$1.219
$1.173
Envase tipo carrete
$1.077
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT PowerFLAT-5x6-8 N-Channel 1 Channel 600 V 8 A 350 mOhms 25 V 3 V 19 nC - 55 C + 150 C 52 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package 785En existencias
$9.798
$5.206
$4.796
$4.557
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 93 mOhms 25 V 3 V 56 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package 581En existencias
$13.352
$8.499
$7.417
$6.813
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 66 A 42 mOhms 25 V 3 V 121 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
847Se espera el 30-04-2027
Cinta cortada
$4.671
$2.780
$2.096
$1.732
Envase tipo carrete
$1.618
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 18 A 200 mOhms 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package 62En existencias
Cinta cortada
$5.320
$2.825
$2.563
$2.187
Envase tipo carrete
$1.903
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 22 A 130 mOhms 25 V 3 V 39 nC - 55 C + 150 C 190 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 1.38 Ohm typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package 1.098En existencias
Cinta cortada
$1.641
$769
$684
$583
Envase tipo carrete
$414
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 3.5 A 1.38 Ohms 30 V 3 V 8.6 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack 94En existencias
$3.281
$1.618
$1.458
$1.173
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 11 A 299 mOhms 25 V 4 V 120 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP pack 807En existencias
$3.315
$1.652
$1.458
$1.230
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 310 mOhms 25 V 3 V 19 nC - 55 C + 150 C 25 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP packa 431En existencias
$5.081
$2.598
$2.358
$1.937
$1.880
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 130 mOhms 25 V 3 V 34 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in a TO-220FP pack 72En existencias
2.000En pedido
$6.027
$3.133
$2.848
$2.358
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24 A 110 mOhms 25 V 3 V 43 nC - 55 C + 150 C 35 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 610En existencias
$4.853
$2.472
$2.244
$1.846
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 200 mOhms 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package 684En existencias
1.000Se espera el 28-05-2027
$5.936
$3.087
$2.803
$2.757
$2.324
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 130 mOhms 25 V 3 V 43 nC - 55 C + 150 C 190 W Enhancement MDmesh Tube

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2 325En existencias
600Se espera el 23-04-2027
$5.332
$2.677
$2.438
$2.051
$2.039
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 200 mOhms 25 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement FDmesh Tube