UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are high-performance devices that deliver Figures of Merit that lower conduction losses and increase efficiency at higher speeds, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.

Results: 29
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 Mfr.
Description Datasheet Availability Pricing (CLP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
onsemi SiC MOSFETs 750V/18MOSICFETG4TO263
Datasheet
280In Stock
MouseReel Available
Min.: 1
Mult.: 1
Max.: 60
: 800

SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO263
Datasheet
486In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/11MOSICFETG4TO247
Datasheet
1.049In Stock
Min.: 1
Mult.: 1
Max.: 50

Through Hole TO-247-4 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247
Datasheet
640In Stock
Min.: 1
Mult.: 1
Max.: 30

Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247
Datasheet
527In Stock
Min.: 1
Mult.: 1
Max.: 30

Through Hole TO-247-4 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO247-4
Datasheet
562In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO263
Datasheet
698In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/5MOSICFETG4TOLL
Datasheet
2.375In Stock
MouseReel Available
Min.: 1
Mult.: 1
Max.: 120
: 2.000

SMD/SMT MO-229-8 1 Channel 750 V 120 A 5 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 1.153 kW Enhancement SiC FET
onsemi SiC MOSFETs 750V/8MOSICFETG4TOLL
Datasheet
714In Stock
MouseReel Available
Min.: 1
Mult.: 1
Max.: 110
: 2.000

SMD/SMT MO-229-8 1 Channel 750 V 106 A 8 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 600 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TOLL
Datasheet
2.467In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT MO-229-8 1 Channel 750 V 53 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 349 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TOLL
Datasheet
2.815In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT MO-229-8 1 Channel 750 V 44 A 33 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 205 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TOLL
Datasheet
2.570In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

SMD/SMT MO-229-8 1 Channel 750 V 35.6 A 44 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TOLL
Datasheet
3.279In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT MO-229-8 1 Channel 750 V 27.8 A 58 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TOLL
Datasheet
1.266In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT MO-229-8 1 Channel 750 V 64 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TO247
Datasheet
326In Stock
600Expected 3/22/2027
Min.: 1
Mult.: 1
Max.: 40

Through Hole TO-247-3 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO247
Datasheet
271In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/33MOSICFETG4TO247
Datasheet
324In Stock
Min.: 1
Mult.: 1
Max.: 20

Through Hole TO-247-4 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO247
Datasheet
445In Stock
Min.: 1
Mult.: 1
Max.: 10

Through Hole TO-247-3 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO263
Datasheet
1.300In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/60MOSICFETG4TO247
Datasheet
1.316In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/9MOSICFETG4TO263-
Datasheet
350In Stock
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TO263
Datasheet
13In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 800

SMD/SMT D2PAK-7 1 Channel 750 V 64 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/23MOSICFETG4TO247
Datasheet
108In Stock
1.800On Order
Min.: 1
Mult.: 1
Max.: 130

Through Hole TO-247-4 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/44MOSICFETG4TO247
Datasheet
18In Stock
6.600On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/6MOSICFETG4TO247-
Datasheet
3In Stock
600Expected 10/20/2026
Min.: 1
Mult.: 1
Max.: 10

Through Hole TO-247-4 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET