CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

Resultados: 182
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial Empaquetado

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 2.296En existencias
$14.799
$8.203
$7.827
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 34 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS 998En existencias
$13.922
$10.037
$8.396
$7.223
$7.075
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 18 A 40 mOhms 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4.600En existencias
Cinta cortada
$3.839
$1.925
$1.732
$1.401
$1.367
Envase tipo carrete
$1.287
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 6.553En existencias
Cinta cortada
$3.794
$2.005
$1.618
$1.390
$1.367
Envase tipo carrete
$1.367
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 13 A 180 mOhms 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 2.138En existencias
Cinta cortada
$4.227
$2.153
$1.948
$1.492
Envase tipo carrete
$1.492
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 168 mOhms 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 725En existencias
Cinta cortada
$10.276
$5.617
$5.161
$5.127
Envase tipo carrete
$4.842
Min.: 1
Mult.: 1
: 1.000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 35 A 60 mOhms 20 V 1.7 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 365En existencias
$10.345
$7.280
$5.890
$5.229
$4.637
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 58 mOhms 20 V 3 V 64 nC - 55 C + 150 C 171 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 4.850En existencias
$1.948
$922
$821
$654
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms 30 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 9.128En existencias
Cinta cortada
$1.584
$743
$661
$515
Envase tipo carrete
$412
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2.5 A 2 Ohms 20 V 2.5 V 7.5 nC - 55 C + 150 C 22 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4.448En existencias
Cinta cortada
$2.472
$1.196
$1.068
$849
$787
Envase tipo carrete
$706
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 51 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 7.426En existencias
Cinta cortada
$2.290
$1.101
$983
$779
$743
Envase tipo carrete
$637
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 6 A 770 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 45 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS 2.661En existencias
Cinta cortada
$4.739
$2.415
$2.187
$1.823
Envase tipo carrete
$1.720
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 12 A 173 mOhms 20 V 3 V 23 nC - 40 C + 150 C 75 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 10A ThinPAK-4 CoolMOS C7 6.299En existencias
Cinta cortada
$4.056
$2.039
$1.789
$1.492
$1.458
Envase tipo carrete
$1.390
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 10 A 230 mOhms 20 V 4 V 20 nC - 40 C + 150 C 67 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 700V 75A TO247-4 165En existencias
$27.354
$16.975
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 75 A 17 mOhms 20 V 3 V 215 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 1.133En existencias
Cinta cortada
$8.977
$4.842
$4.443
$4.044
Envase tipo carrete
$4.044
Min.: 1
Mult.: 1
: 1.700
Si SMD/SMT HDSOP-10 N-Channel 1 Channel 600 V 29 A 80 mOhms 20 V 3 V 42 nC - 55 C + 150 C 174 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 15A VSON-4 2.981En existencias
Cinta cortada
$5.799
$3.463
$3.019
$2.791
$2.689
Envase tipo carrete
$2.689
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 15 A 115 mOhms 20 V 3 V 35 nC - 40 C + 150 C 102 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 46A TO220-3 CoolMOS C7 713En existencias
$13.888
$10.048
$8.374
$7.451
$7.052
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 518En existencias
Cinta cortada
$8.613
$4.625
$4.238
$4.067
$3.839
Envase tipo carrete
$3.839
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 2.280En existencias
Cinta cortada
$4.614
$2.711
$2.096
$1.823
$1.720
Envase tipo carrete
$1.618
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 13 A 185 mOhms 20 V 3 V 24 nC - 40 C + 150 C 77 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 479En existencias
$25.702
$16.109
$15.859
Min.: 1
Mult.: 1
Si Through Hole TO-247-4 N-Channel 1 Channel 600 V 109 A 17 mOhms 20 V 3 V 240 nC - 55 C + 150 C 446 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 8.650En existencias
Cinta cortada
$2.039
$970
$865
$681
Envase tipo carrete
$554
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4.5 A 1 Ohms 20 V 2.5 V 11 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 2.712En existencias
Cinta cortada
$7.758
$4.113
$4.033
$3.634
$3.361
Envase tipo carrete
$3.213
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 83 A 104 mOhms 20 V 3.5 V 42 nC - 40 C + 150 C 122 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 3.336En existencias
Cinta cortada
$4.079
$2.210
$1.834
$1.595
$1.538
Envase tipo carrete
$1.538
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 14 A 153 mOhms 20 V 3.5 V 28 nC - 40 C + 150 C 85 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 697En existencias
$12.008
$6.517
$5.958
$5.879
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 3.408En existencias
$8.043
$4.193
$3.839
$3.498
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube