TPH7R506NH,L1Q
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Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) U-MOSVIII-H 60V 55A 31nC MOSFET
En existencias: 15.565
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Existencias:
-
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Precio (CLP)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| Cinta cortada / MouseReel™ | ||
| $1.989 | $1.989 | |
| $1.270 | $12.700 | |
| $857 | $85.700 | |
| $681 | $340.500 | |
| $629 | $629.000 | |
| $599 | $1.497.500 | |
| Envase tipo carrete completo (pedir en múltiplos de 5000) | ||
| $599 | $2.995.000 | |
Hoja de datos
Application Notes
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Simple Guide to Improving Ripple Rejection Ratio of LDO Regulators
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- TARIC:
- 8541290000
- MXHTS:
- 85412999
- ECCN:
- EAR99
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