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MCBS260N10YHE3-TP

Name: Micro Commercial Components (MCC) MCBS260N10YHE3-TP
Brand: Micro Commercial Components (MCC)
SKU: 833-MCBS260N10YHE3
Price: 8232 CLP
Availability: InStock

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Mouser N.º:

833-MCBS260N10YHE3

Fabricante N.º:

MCBS260N10YHE3-TP

Fabricante:

Micro Commercial Components (MCC)

Descripción:

Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL MOSFET,TO-263-7

Ciclo de vida:

Nuevo producto:

Lo nuevo de este fabricante.

Hoja de datos:

MCBS260N10YHE3-TP Hoja de datos (PDF)

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En existencias: 690

Existencias:: 690 Se puede enviar inmediatamente

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Plazo de entrega de fábrica:: 26 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

Precio ext.:

Est. Tarifa:

Precio (CLP)

Cantidad	Precio unitario	Precio ext.
	$8.232	$8.232
	$5.578	$55.780
	$4.995	$499.500
	$4.122	$2.061.000
	$3.920	$3.920.000
Envase tipo carrete completo (pedir en múltiplos de 8000)
	$3.920	$31.360.000

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Atributo del producto	Valor de atributo	Seleccionar atributo
Fabricante:	Micro Commercial Components (MCC)
Categoría de producto:	Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:
Tecnología:	Si
Estilo de montaje:	SMD/SMT
Paquete / Cubierta:	TO-263-7
Polaridad del transistor:	N-Channel
Número de canales:	1 Channel
Vds - Tensión disruptiva entre drenaje y fuente:	100 V
Id - Corriente de drenaje continua:	260 A
Rds On - Resistencia entre drenaje y fuente:	1.8 mOhms
Vgs - Tensión entre puerta y fuente:	- 20 V, 20 V
Vgs th - Tensión umbral entre puerta y fuente:	4 V
Qg - Carga de puerta:	161 nC
Temperatura de trabajo mínima:	- 55 C
Temperatura de trabajo máxima:	+ 150 C
Dp - Disipación de potencia :	375 W
Modo canal:	Enhancement
Empaquetado:	Reel
Empaquetado:	Cut Tape
Marca:	Micro Commercial Components (MCC)
Configuración:	Single
Tiempo de caída:	123.7 ns
Tipo de producto:	MOSFETs
Tiempo de subida:	174.5 ns
Serie:	MCBS260N10YHE3
Cantidad de empaque de fábrica:	8000
Subcategoría:	Transistors
Tipo de transistor:	Split Gate Trench MOSFET
Tiempo de retardo de apagado típico:	109 ns
Tiempo típico de demora de encendido:	41 ns

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Hoja de datos

MCBS260N10YHE3-TP Hoja de datos (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

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MCBS260N10YHE3 Power MOSFET

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