TK190A65Z,S4X
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Fabricante:
Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET 650V 190mOhms DTMOS-VI
En existencias: 96
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Existencias:
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96 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
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Plazo de entrega de fábrica:
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20 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (CLP)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| $4.136 | $4.136 | |
| $2.127 | $21.270 | |
| $1.871 | $187.100 | |
| $1.576 | $788.000 | |
| $1.477 | $1.477.000 |
Hoja de datos
Application Notes
- Basics of Diodes (Absolute Maximum Ratings and Electrical Characteristics)
- Basics of Diodes (Power Losses and Thermal Design)
- Basics of Diodes (Types and Overview of Diodes)
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors
- Bipolar Transistors Maximum Ratings
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Surface Mount Small Signal Transistor (BJT) Precautions for use
Models
Product Catalogs
Test/Quality Data
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- TARIC:
- 8541290000
- ECCN:
- EAR99
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