IXFR32N100Q3

IXYS
747-IXFR32N100Q3
IXFR32N100Q3

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Q3Class HiPerFET Pwr MOSFET 1000V/23A

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Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
36 Semanas Tiempo estimado de producción de fábrica.
Se establece un tiempo de entrega prolongado para este producto.
Mínimo: 300   Múltiples: 30
Precio unitario:
$-
Precio ext.:
$-
Est. Tarifa:

Precio (CLP)

Cantidad Precio unitario
Precio ext.
$29.325 $8.797.500

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
1 kV
23 A
350 mOhms
- 30 V, 30 V
3.5 V
195 nC
- 55 C
+ 150 C
570 W
Enhancement
HiPerFET
Tube
Marca: IXYS
Configuración: Single
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: PH
Tipo de producto: MOSFETs
Tiempo de subida: 300 ns
Serie: IXFR32N100
Cantidad de empaque de fábrica: 30
Subcategoría: Transistors
Tipo de transistor: 1 N-Channel
Peso de la unidad: 6 g
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Atributos seleccionados: 0

Hoja de datos

PCN

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541900000
MXHTS:
8541900299
ECCN:
EAR99

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Qrr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

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