IXFA5N50P3

IXYS
747-IXFA5N50P3
IXFA5N50P3

Fabricante:

Descripción:
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Polar3 HiPerFETs MOSFET w/Fast Diode

Hoja de datos:
Modelo ECAD:
Descargue Library Loader gratis para convertir este archivo para su herramienta ECAD. Conozca más sobre el modelo ECAD.
Más información
Conozca más sobre IXYS IXFA5N50P3

Disponibilidad

Existencias:
No en existencias
Plazo de entrega de fábrica:
Mínimo: 1   Múltiples: 1
Precio unitario:
$-
Precio ext.:
$-
Est. Tarifa:

Precio (CLP)

Cantidad Precio unitario
Precio ext.
$3.062 $3.062
$1.979 $19.790
$1.448 $144.800
$1.211 $605.500
$1.054 $1.054.000

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
RoHS:  
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
500 V
5 A
1.65 Ohms
HiPerFET
Tube
Marca: IXYS
País de ensamblaje: Not Available
País de difusión: Not Available
País de origen: Not Available
Tipo de producto: MOSFETs
Serie: IXFA5N50P
Cantidad de empaque de fábrica: 50
Subcategoría: Transistors
Peso de la unidad: 4 g
Productos encontrados:
Para mostrar productos similares, seleccione al menos una casilla de verificación
Seleccione al menos una de las casillas de verificación anteriores para mostrar productos similares en esta categoría.
Atributos seleccionados: 0

Hoja de datos

Esta funcionalidad requiere que JavaScript esté habilitado.

CNHTS:
8541210000
CAHTS:
8541900000
USHTS:
8541900080
JPHTS:
8542900006
TARIC:
8541900000
MXHTS:
8541900299
ECCN:
EAR99

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Medical Equipment Solutions

Littelfuse Medical Equipment Solutions provide robust designed and quality components needed to help with reliable operating and equipment up-time. These solutions include ventilators, defibrillator, and ultrasounds. Littelfuse Medical Equipment Solutions are ideal for life support systems, patient care equipment, and patient monitoring systems.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Se ha producido un error inesperado.


¿Tiene alguna pregunta? Visite el Centro de ayuda.
Si tiene preguntas sobre un pedido específico, inicie sesión en su cuenta.

Si tiene más problemas, comuníquese con nosotros al 800-346-6873 o envíe un correo electrónico a help@mouser.com.