STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM

STMicroelectronics M95P16 Ultra Low Power 16-Mbit SPI Page EEPROM is based on Non-Volatile Memory (NVMe) technology. This EEPROM comes with byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to EEPROM technology. The M95P16 EEPROM is organized as 4096 programmable pages of 512 bytes each, accessed through an SPI bus, with high-performance dual-and quad-SPI outputs. This EEPROM features ultra-low power consumption, ECC for high memory reliability (DEC, TED), electronic identification, and Schmitt trigger inputs for noise filtering. The M95P16 EEPROM supports up to 80MHz clock frequency, 1.6V to 3.6V supply voltage range, and is ECOPACK2 (RoHS compliant) and halogen-free.

The M95P16 EEPROM offers two additional (identification) 512-byte pages. The first contains identification data and, upon request, the UID. The second can store sensitive application parameters, which later can be permanently locked in read-only mode. This EEPROM accepts page/block/sector/chip erase commands to set the memory to an erased state.

Features

ECC for high memory reliability (DEC and TED)
Schmitt trigger inputs for noise filtering
Output buffer programmable strength
Operating status flags for ISO26262
Software reset
Write protection by block, with top/bottom option
Unique ID upon request
Electronic identification

Supports SFDP (serial flash discoverable parameters) mode
JEDEC standard manufacturer identification
Package:
- ECOPACK2 (RoHS compliant) and halogen-free packages:
  - DFN8 2mm x 3mm
  - SO8N
  - WLCSP8

Specifications

Interface:
- Supports Serial Peripheral Interface (SPI) and dual/quad outputs
- 1.6V to 3.6V VCC wide voltage range
- Temperature range:
  - -40°C to 85°C (industrial)
  - -40°C to 105°C (extended)
- Fast read:
  - 50MHz read single output
  - 80MHz fast read single/dual/quad output with one dummy byte
Memory:
- 16 Mbit of page EEPROM
  - 32-Kbyte blocks and 4-Kbyte sectors
  - 512 bytes page size
  - Two identification pages
- 500k cycles on full temperature range write endurance
- Data retention:
  - 100 years
  - 10 years after 500k cycles

Ultra-low power consumption:
- 0.6μA (typical) in deep power-down mode
- 16μA (typical) in standby mode
- 800μA (typical) for read single at 10MHz
- 1.5mA (typical) for page write
- Current peak control <3mA
High write/erase performance:
- Fast write/program/erase times:
  - 2ms (typical) for byte and page write (includes auto-erase and program) for 512 bytes
  - 1.2ms (typical) for page program (512 bytes)
  - 1.1ms (typical) for page erase
  - 1.3ms (typical) for sector erase
  - 4ms (typical) for block erase
  - 8ms (typical) for chip erase
- Page program with buffer load