Renesas / Dialog AT25SF041B 4Mbit SPI Serial Flash Memory
Renesas / Dialog AT25SF041B 4Mbit SPI Serial Flash Memory is part of the Renesas standard class code and data storage solutions. The solution design is developed for 3V systems in which program code is followed from Flash memory into embedded or external RAM for execution.The Renesas / Dialog AT25SF041B architecture includes erase block sizes optimized to meet current code and data storage applications and three security register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, and locked key storage.
Features
- Universally compatible pinout and command set
- Standard block architecture
- Supports Dual I/O, Quad I/O, and XiP operation
- Continuous read, wrap, and burst modes for XiP
Specifications
- Serial Peripheral Interface (SPI) compatible
- Supports SPI modes 0 and 3 (1,1,1)
- Supports dual input and dual output operation (1,1,2)
- Supports quad input and quad output operation (1,1.4)
- Supports quad XiP (continuous read mode) operation (1.4.4 and 0,4.4)
- 108MHz maximum operating frequency
- Single supply voltages
- 2.7V to 3.6V
- 2.5V to 3.6V
- Serial Flash Discoverable Parameters (SFDP, JDES216B) support
- OTP memory
- 3x protected programmable security register pages (page size: 256 bytes)
- 64-bit factory programmable UID register
- Hardware Write Protection (WP pin)
- Software Write Protection (programmable non-volatile control registers)
- Program and erase, suspend, and resume
- Byte programming size up to 256 bytes
- Erase size and duration
- Uniform 4kbyte block erase (70ms typical)
- Uniform 32kbyte block erase (150ms typical)
- Uniform 64kbyte block erase (250ms typical)
- Full chip erase (2 seconds typical)
- Low power dissipation
- 25µA maximum standby current
- 12µA maximum deep power-down current
- Endurance of 100,000 program and erase cycles
- 20 years of data retention
- Industrial -40°C to +85°C temperature range
- Industry Standard Green (Pb/Halide-free/RoHS compliant) package options
- 8-lead SOIC (0.150" narrow and 0.208" wide)
- 8-pad ultra-thin UDFN (2mm x 3mm x 0.6mm)
- Die wafer form
Block Diagram
Publicado: 2023-10-04
| Actualizado: 2023-11-08
