Volver a onsemi

onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETs

onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETs are designed for fast switching applications, offering reliable performance with negative gate voltage drive and turn-off spikes. onsemi NTBL032N065M3S MOSFETs are optimized for an 18V gate drive and also perform well with a 15V drive. The TOLL package enhances thermal and switching performance with its Kelvin Source configuration and reduced parasitic source inductance. The devices also meet Moisture Sensitivity Level 1 (MSL 1) standards.

Features

  • Typical RDS(on) = 32m at VGS = 18V
  • Ultra-low gate charge (QG(tot) = 55nC)
  • High speed switching with low capacitance (Coss = 113pF)
  • 100% Avalanche tested
  • This device is Halide-free and RoHS-compliant with exemption 7a, Pb-free 2LI (on second-level interconnection)

Applications

  • Switching Mode Power Supplies (SMPS)
  • Solar inverters
  • Uninterruptable Power Supplies (UPS)
  • Energy storage
  • EV charging infrastructure

Application Circuit Diagram

Application Circuit Diagram - onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETs
Publicado: 2025-01-20 | Actualizado: 2025-02-19