STMicroelectronics TN8050H-12WL High Temperature SCR Thyristor

STMicroelectronics TN8050H-12WL High Temperature SCR Thyristor is suitable for industrial applications that require high immunity with lower gate current, such as motor starters and power supplies. With a surge capability of 1400V, the STMicroelectronics TN8050H-12WL SCR offers additional robustness for network applications such as renewable energy inverters and uninterruptible power supplies (UPS). The device is available in a high-creepage TO-247LL package with a backside anode and resin corners, which provide additional creepage distance up to 6.8mm to comply with safety standards. The TN8050H-12WL SCR is also suitable for industrial applications of up to 80ARMS.

Features

  • 1200V maximum blocking voltage
  • 1400V maximum surge voltage
  • 50mA maximum IGT
  • High static and dynamic commutation at +150°C
    • 1500V/µs dV/dt
    • 200A/µs dI/dt
  • +150°C maximum junction temperature at 800V
  • Conduction cooling
  • ECOPACK2 component (RoHS and HF compliance)
  • High creepage TO247 long lead package
  • UL 94, level V0 resin compliance

Applications

  • Solar
  • Wind renewable energy inverters
  • Solid state relays (SSR)
  • Uninterruptible power supplies (UPS)
  • Industrial SMPS
  • Bypass switches
  • AC-DC inrush current limiting circuits (ICL)
  • AC-DC voltage-controlled rectifiers
  • Battery chargers
  • Industrial welding systems
  • Soft starters for motor drive
  • Heating systems

Specifications

  • Maximum repetitive peak off-state voltage (50/60Hz)
    • 1200V at +125°C
    • 800V at +150°C
  • 1400V maximum non-repetitive surge voltage
  • 80A maximum on-state RMS current (180° conduction angle)
  • 51A maximum average on-state current (180° conduction angle)
  • Maximum non-repetitive surge peak on-state current
    • 745A when tp = 8.3ms
    • 680A when tp = 10ms
  • Maximum peak positive gate at 20µs, +150°C
    • 8A current
    • 5V voltage
  • 2312A2s maximum I2t value for fusing
  • 200A/µs maximum critical rate of rise of on-state current
  • 1W maximum average gate power dissipation
  • 3.5V maximum peak reverse gate voltage
  • 0.85V maximum threshold voltage
  • 8.6mΩ maximum dynamic resistance
  • Thermal resistance
    • 0.35°C/W maximum junction-to-case
    • 50°C/W typical junction-to-ambient
  • -40°C to +150°C operating junction temperature range
Publicado: 2025-12-22 | Actualizado: 2026-01-06