Analog Devices / Maxim Integrated DS28E80 1-Wire Memory Chip

Analog Devices Inc. DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. It has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written eight times. The ADI DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.

Features

  • High gamma resistance allows user-programmable manufacturing or calibration data before medical sterilization
    • Resistant up to 75kGy (kiloGray) of gamma radiation
    • Reprogrammable 248 bytes of user memory
  • Compact package and single IO interface reduces board space and enhances reliability
    • Unique factory-programmed, 64-bit identification number
    • Communicates at 1-wire standard speed (15.3kbps max) and overdrive speed (76kbps max)
    • 3.3V ±10%, -40°C to + 85°C reading, 0°C to +50°C writing operating range 
    • ±8kV HBM ESD protection (typ) for IO pin
    • 6-Pin TDFN package
  • Advanced 1-wire protocol minimizes interface to just single contact
  • Lower block size provides greater flexibility in programming user memory
    • Memory is organized as 8-byte blocks
    • Each block can be written eight times
    • User-programmable write protection for individual memory blocks

Applications

  • Identification of medical consumables
  • Identification and calibration medical tools/accessories

Block Diagram

Block Diagram - Analog Devices / Maxim Integrated DS28E80 1-Wire Memory Chip
Publicado: 2015-01-27 | Actualizado: 2023-04-19