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El/los Semiconductores discretos más reciente(s)

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Diodes Incorporated D3V3ZF1BD2CSP Bi-Directional TVS Diode

06-22-2026

- Low-capacitance device designed specifically to protect high-speed differential lines.

Diodes Incorporated DTHP60B07PT 60A Hyper-Fast Planar Rectifiers

03-13-2026

- Features a 650V reverse voltage, low forward voltage drop, and ultra-fast reverse recovery time.

Diodes Incorporated 5.0SMCJ1xCA 5000W Transient Voltage Suppressor

10-31-2025

- High-power TVS diode designed to protect sensitive electronic circuits from voltage spikes.

Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

10-31-2025

- Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10-31-2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET

10-21-2025

- Features superior switching performance, ideal for high-efficiency power-management applications.

Diodes Incorporated DTH1006P5 Glass Passivated Fast Recovery Rectifier

10-13-2025

- A 600V peak repetitive reverse voltage (VRRM) rectifier in a thermally efficient PowerDI®5 package.

Diodes Incorporated DXTP80x PNP Bipolar Transistors

09-18-2025

- PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.

Diodes Incorporated DXTN80x NPN Bipolar Transistors

09-17-2025

- Offers a small form factor, thermally efficient PowerDI 3333-8 package, for higher-density products.

Diodes Incorporated DXTN/P 78Q & 80Q Bipolar Transistors

07-24-2025

- Offers 30V, 60V, & 100V ratings, with exceptional conduction efficiency and thermal performance.

Diodes Incorporated TT8M 8A Glass Pasivated Bridge Rectifiers

05-01-2025

- Features a 1000V maximum repetitive peak reverse voltage and an 8A average rectified output current.

Diodes Incorporated DSCxA065LP Silicon Carbide Schottky Diodes

02-20-2025

- Features superior reverse leakage stability at high temperatures in a DFN8080 package.

Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors

11-14-2024

- Features a proprietary structure for achieving ultra-low VCE(SAT) performance.

Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

10-01-2024

- Provides low on-resistance in a thermally efficient small form factor package.

Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET

08-01-2024

- 20V N-Ch MOSFET designed to minimize the RDS(ON), available in an X2-DFN0806-3 package.

Diodes Incorporated DT1042-02SRQ 2-Ch Low Capacitance TVS Diode Array

07-01-2024

- Designed to protect sensitive electronics from ESD damage.

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs

06-24-2024

- Designed to minimize the on-state resistance and maintain excellent switching performance.

Diodes Incorporated SxCMHQ AEC-Q101 Glass Passivated Rectifiers

06-04-2024

- Offers high-current capability and low forward voltage drop.

Diodes Incorporated DESD24VS2SOQ 24V CAN/LIN Bus Protector

06-01-2024

- An ESD and surge protection device packaged in a compact, surface-mount SOT23 package.

Diodes Incorporated DMP3014SFDE 30V P-Ch Enhancement Mode MOSFETs

05-01-2024

- Offers low on-resistance & gate threshold voltage, while maintaining switching performance.

Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor

05-01-2024

- Available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package.

Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

04-01-2024

- Designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance.

Diodes Incorporated US1NDFQ 1A Surface-Mount Ultra-Fast Rectifier

03-01-2024

- Offers ultra-fast recovery time for high efficiency in general rectification applications.

Diodes Incorporated DMP68D1LV Dual P-Channel Enhancement Mode MOSFET

01-01-2024

- Offers low on-resistance and input capacitance, while maintaining superior switching performance.

Diodes Incorporated DESDxxVxS2UTQ Two-Ch Unidirectional TVS Diode

01-01-2024

- Designed to protect sensitive electronics from damage caused by ESD.

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onsemi NVNJWS1K6N061L N-Channel MOSFET

07-30-2026

- Features low RDS(on) and low gate threshold with integrated ESD protection.

onsemi EMD4DXV6 Digital Transistors ( BRTs)

07-30-2026

- Designed to replace a single device and its external resistor bias network.

ROHM Semiconductor 600V Super Junction (SJ) MOSFETs

07-21-2026

- Compact, low-profile package options that provide excellent heat dissipation.

IXYS Diodo rectificador de propósito general de 1,600 V DK610S3RP

07-20-2026

- Space-saving, ideal for automated assembly, and well-suited for DC phase-control applications.

IXYS Retificador de 1,000 V 10 A DK010S3ARP

07-20-2026

- Features glass-passivated junctions for enhanced stability and is assembled in a DO-214AB package.

onsemi GaNEXUS™ GaN FETs

07-08-2026

- Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.

Bourns Diodos TVS CDDFN2 de montaje superficial

07-07-2026

- ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.

Semtech RCLAMP2891PQ TVS Diode

06-30-2026

- Ultra-low capacitance 1-line, 28V TVS diode, protects high‑speed signal lines from ESD and EOS.

Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode

06-29-2026

- Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.

Bourns CDSOD323-T24LC-Q Automotive-Grade TVS Diodes

06-26-2026

- Bidirectional automotive-grade TVS diodes in a compact SOD-323 package.

Littelfuse Secuencias de diodos TVS SPA

06-26-2026

- TVS diode arrays for ESD, EFT, and surge protection across data and power interfaces.

Bourns CDSOD323-TxxSC-Q TVS Diodes

06-25-2026

- Offer a selection of voltage options from 3V to 36V in a bidirectional configuration.

Diodes Incorporated D3V3ZF1BD2CSP Bi-Directional TVS Diode

06-22-2026

- Low-capacitance device designed specifically to protect high-speed differential lines.

Vishay MXP075 MaxSiC® 750V N-Channel MOSFETs

06-19-2026

- Features a 750V drain-source voltage, a fast switching speed & a 3μs short-circuit withstand time.

Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs

06-18-2026

- Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.

Infineon Technologies EasyPACK™ S Modules

06-12-2026

- Efficient power conversion in a compact, easy-to-integrate package built for modern power designs.

Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETs

05-27-2026

- Advanced N‑channel devices engineered for high-efficiency power switching.

Texas Instruments 2N7002L 6V N-channel MOSFETs

05-18-2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Bourns CDSOT23-SM712-Q Surface-Mount TVS Diode

05-12-2026

- Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.

Infineon Technologies Módulos de potencia automotrices CIPOS™ Prime CoolSiC™

05-06-2026

- Power Modules are designed for high performance in xEV applications.

Littelfuse Diodos TVS AK-FL

05-04-2026

- Axial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.

Littelfuse Diodos TVS FlatSuppressX™ TP1KSMB-FL

05-04-2026

- Designed specifically to protect sensitive electronic equipment from voltage transients.

Littelfuse Diodos TVS FlatSuppressX™ TP5.0SMD-FL

05-04-2026

- 5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.

Littelfuse SJx08x High-Temperature SCRs

04-24-2026

- Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.

Littelfuse QVx35xHx High-Temperature Alternistor TRIACs

04-24-2026

- Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.

Viendo: 1 - 25 de 1179

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