CoolSIC SiC MOSFETs

Results: 5
Select Image Part # Mfr. Description Datasheet Availability Pricing (CLP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 1.461In Stock
1.200Expected 12/23/2026
$52.885
$38.975
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 89 A 33 mOhms - 10 V, + 23 V 3.5 V 137 nC - 55 C + 150 C 576 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 2.266In Stock
$30.168
$24.164
$20.894
$19.766
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 48 A 64 mOhms - 10 V, + 23 V 3.5 V 82 nC - 55 C + 150 C 348 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package 1.206In Stock
$25.554
$19.094
$16.508
Min.: 1
Mult.: 1
Max.: 240
Through Hole TO-247-4 1 Channel 2 kV 34 A 98 mOhms - 10 V, + 23 V 3.5 V 64 nC - 55 C + 150 C 267 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
5.907On Order
$104.130
$86.038
$77.505
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 123 A 16.5 mOhms - 10 V, + 23 V 3.5 V 246 nC - 55 C + 150 C 552 W Enhancement CoolSIC
Infineon Technologies SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
3.859On Order
$21.475
$16.041
$13.865
$13.124
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 2 kV 26 A 131 mOhms - 10 V, + 23 V 3.5 V 55 nC - 55 C + 150 C 217 W Enhancement CoolSIC