Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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Resultados: 38
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Tipo de producto Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 2En existencias
600Se espera el 20-08-2027
Cinta cortada
$23.948
$17.887
$15.471
Envase tipo carrete
$14.651
Min.: 1
Mult.: 1
: 600
SiC MOSFETS
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 1.235En existencias
Cinta cortada
$25.372
$18.946
$16.394
Envase tipo carrete
$15.938
Min.: 1
Mult.: 1
: 600
SiC MOSFETS SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package 443En existencias
$31.581
$25.281
$21.863
$20.701
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 181En existencias
600En pedido
$22.808
$13.512
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole Hip247-4 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 14En existencias
1.000En pedido
Cinta cortada
$15.506
$8.818
$8.795
Envase tipo carrete
$8.317
Min.: 1
Mult.: 1
: 1.000
SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 187En existencias
$16.121
$10.789
$8.818
$8.408
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package 798En existencias
Cinta cortada
$15.130
$11.267
$9.399
$8.374
Envase tipo carrete
$7.815
Min.: 1
Mult.: 1
: 1.000
SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 508En existencias
600Se espera el 29-01-2027
$15.938
$12.145
$10.117
$9.023
$8.419
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP-247-4 N-Channel


STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 457En existencias
$12.862
$7.029
$6.437
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP247-4 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 429En existencias
$15.130
$11.267
$9.399
$8.374
$7.815
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP247-4 N-Channel
STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1.394En existencias
Cinta cortada
$11.450
$7.815
$6.448
$5.742
$5.377
Envase tipo carrete
$5.377
Min.: 1
Mult.: 1
: 1.800
SiC MOSFETS SMD/SMT TOLL-8 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 13En existencias
600Se espera el 19-11-2027
$21.589
$13.432
$12.600
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP247-3 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 20En existencias
1.200En pedido
$15.733
$10.504
$9.445
$8.807
$8.567
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP-247-4 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 495En existencias
1.000Se espera el 28-05-2027
Cinta cortada
$14.993
$11.176
$9.308
$8.294
Envase tipo carrete
$7.758
Min.: 1
Mult.: 1
: 1.000
SiC MOSFETS SMD/SMT N-Channel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x 4.893En existencias
Cinta cortada
$3.851
$1.925
$1.743
$1.413
$1.401
Envase tipo carrete
$1.287
Min.: 1
Mult.: 1
: 3.000
MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 2En existencias
1.000Se espera el 15-10-2027
Cinta cortada
$18.752
$11.245
Envase tipo carrete
$10.504
Min.: 1
Mult.: 1
: 1.000
SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package 7En existencias
1.200En pedido
$22.808
$14.811
$13.102
$12.054
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP-247-4 N-Channel
STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 8En existencias
1.800Se espera el 05-02-2027
Cinta cortada
$12.783
$9.034
$7.519
$6.710
$6.266
Envase tipo carrete
$6.266
Min.: 1
Mult.: 1
: 1.800
SiC MOSFETS SMD/SMT TOLL-8 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 5En existencias
600Se espera el 01-10-2027
$15.938
$12.145
$10.117
$9.023
$8.419
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP-247-3 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
1.200Se espera el 20-08-2027
Cinta cortada
$35.124
$28.117
$24.312
Envase tipo carrete
$23.025
Min.: 1
Mult.: 1
: 600
SiC MOSFETS SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package Plazo de entrega 25 Semanas
Cinta cortada
$30.726
$24.597
$21.270
$20.142
Envase tipo carrete
$18.821
Min.: 1
Mult.: 1
: 1.000
SiC MOSFETS SMD/SMT H2PAK-7 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
1.997Se espera el 04-06-2027
Cinta cortada
$21.407
$15.585
$14.138
$13.409
Envase tipo carrete
$12.281
Ver
Min.: 1
Mult.: 1
: 1.000
SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
998Se espera el 04-06-2027
Cinta cortada
$26.272
$17.055
$17.021
$16.087
Envase tipo carrete
$15.027
Min.: 1
Mult.: 1
: 1.000
SiC MOSFETS SMD/SMT H2PAK-7 N-Channel


STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
600Se espera el 12-11-2027
$21.282
$16.212
$13.512
$11.245
Min.: 1
Mult.: 1
SiC MOSFETS Through Hole HiP-247-4 N-Channel
STMicroelectronics MOSFETs de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
300Se espera el 27-08-2027
Cinta cortada
$16.337
$12.441
$10.367
Envase tipo carrete
$9.240
Min.: 1
Mult.: 1
: 600
SiC MOSFETS