HP8K/HT8K Dual Channel Enhancement Mode MOSFETs

ROHM Semiconductor HP8K/HT8K Dual Channel Enhancement Mode MOSFETs offer dual N-channel or N-channel/P-channel transistor polarity. The HP8K and HT8K MOSFETs are available in small, surface-mount HSMT8 and HSOP8 backside heat-dissipating dual packages that provide low on-resistances and energy savings. Applications include single-/three-phase brushless motor drives or switching operations.

Resultados: 16
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Empaquetado
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications. 5.917En existencias
Cinta cortada
$2.655
$1.287
$1.115
$918
$865
Envase tipo carrete
$777
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT HSMT-8 N-Channel 2 Channel 100 V 13 A 57 mOhms 20 V 2.5 V 6.7 nC - 55 C + 150 C 14 W Enhancement Reel, Cut Tape, MouseReel
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications. 4.860En existencias
Cinta cortada
$2.780
$1.367
$1.173
$979
Envase tipo carrete
$864
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel 2 Channel 100 V 17 A 54 mOhms 20 V 2.5 V 6.7 nC - 55 C + 150 C 21 W Enhancement Reel, Cut Tape, MouseReel
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V 8.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8ME5 is a low on-resistance MOSFET ideal for switching applications. 10.422En existencias
Cinta cortada
$2.415
$1.173
$999
$828
$774
Envase tipo carrete
$686
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel, P-Channel 2 Channel 100 V 8 A, 8.5 A 193 mOhms, 273 mOhms 20 V 2.5 V 2.9 nC, 19.7 nC - 55 C + 150 C 20 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE7 is a low on-resistance MOSFET ideal for switching applications. 4.724En existencias
Cinta cortada
$4.352
$2.199
$1.994
$1.629
Envase tipo carrete
$1.527
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel 2 Channel 100 V 24 A 19.6 mOhms 20 V 2.5 V 19.8 nC - 55 C + 150 C 26 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 100V 7A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE5 is a low on-resistance MOSFET ideal for switching applications. 5.978En existencias
Cinta cortada
$1.925
$910
$777
$636
Envase tipo carrete
$520
Ver
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT HSMT-8 N-Channel 2 Channel 100 V 7 A 193 mOhms 20 V 2.5 V 2.9 nC - 55 C + 150 C 13 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HSMT8 100V 12.5A N CHAN 2.962En existencias
Cinta cortada
$2.677
$1.310
$1.173
$931
$902
Envase tipo carrete
$791
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT HSMT-8 N-Channel 2 Channel 100 V 12.5 A 60 mOhms 20 V 4 V 6.3 nC - 55 C + 150 C 14 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications. 4.570En existencias
Cinta cortada
$2.768
$1.356
$1.208
$964
Envase tipo carrete
$868
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel 2 Channel 60 V 23 A 27 mOhms 20 V 2.5 V 7.6 nC - 55 C + 150 C 21 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications. 4.956En existencias
Cinta cortada
$4.238
$2.142
$1.937
$1.572
Envase tipo carrete
$1.470
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel 2 Channel 60 V 24 A 11.5 mOhms 20 V 2.5 V 22 nC - 55 C + 150 C 26 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 12A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MC5 is a low on-resistance MOSFET ideal for switching applications. 4.536En existencias
Cinta cortada
$2.404
$1.162
$1.038
$824
Envase tipo carrete
$707
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel, P-Channel 2 Channel 60 V 12 A 90 mOhms, 96 mOhms 20 V 2.5 V 3.1 nC, 17.3 nC - 55 C + 150 C 20 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 12A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KB5 is a low on-resistance MOSFET ideal for switching applications. 9.000En existencias
Cinta cortada
$1.903
$898
$801
$629
Envase tipo carrete
$502
Ver
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT HSMT-8 N-Channel 2 Channel 40 V 12 A 47 mOhms 20 V 2.5 V 3.5 nC - 55 C + 150 C 13 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HSMT8 2NCH 40V 8A 2.780En existencias
Cinta cortada
$2.404
$1.162
$1.033
$820
$784
Envase tipo carrete
$678
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT HSMT-8 N-Channel 2 Channel 40 V 15 A 17.2 mOhms 20 V 2.5 V 10.6 nC - 55 C + 150 C 14 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 10A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC5 is a low on-resistance MOSFET ideal for switching applications. 6.472En existencias
Cinta cortada
$1.903
$902
$804
$632
Envase tipo carrete
$586
Ver
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT HSMT-8 N-Channel 2 Channel 60 V 10 A 90 mOhms 20 V 2.5 V 3.1 nC - 55 C + 150 C 13 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 15A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC6 is a low on-resistance MOSFET ideal for switching applications. 3.755En existencias
Cinta cortada
$2.575
$1.253
$1.118
$890
Envase tipo carrete
$778
Ver
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT HSMT-8 N-Channel 2 Channel 60 V 15 A 29 mOhms 20 V 2.5 V 7.6 nC - 55 C + 150 C 14 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications. 5.000En existencias
Cinta cortada
$2.757
$1.344
$1.208
$962
$935
Envase tipo carrete
$821
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel 2 Channel 40 V 24 A 15.7 mOhms 20 V 2.5 V 22 nC - 55 C + 150 C 21 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB7 is a low on-resistance MOSFET ideal for switching applications. 4.969En existencias
Cinta cortada
$4.215
$2.130
$1.925
$1.572
Envase tipo carrete
$1.481
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel 2 Channel 40 V 24 A 8 mOhms 20 V 2.5 V 27 nC - 55 C + 150 C 26 W Enhancement Reel, Cut Tape
ROHM Semiconductor Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications. 4.925En existencias
Cinta cortada
$2.404
$1.162
$1.038
$824
Envase tipo carrete
$707
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT HSOP-8 N-Channel, P-Channel 2 Channel 60 V 16.5 A, 18 A 46 mOhms, 44 mOhms 20 V 2.5 V 3.5 nC, 17.2 nC - 55 C + 150 C 20 W Enhancement Reel, Cut Tape