IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

Results: 44
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Description Datasheet Availability Pricing (CLP) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package / Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247 package
Datasheet
836In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 333 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package
Datasheet
27In Stock
240Expected 10/8/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube


Infineon Technologies IGBTs 1200 V, 15 A IGBT7 S7 with anti-parallel diode in TO-247 package
Datasheet
432In Stock
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 36 A 176 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 20 A IGBT with anti-parallel diode in TO-247 package
Datasheet
95In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 40 A 136 W - 40 C + 175 C IGBT7 T7 Tube


Infineon Technologies IGBTs 1200 V, 25 A IGBT7 S7 with anti-parallel diode in TO-247 package
Datasheet
465In Stock
Min.: 1
Mult.: 1
Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 55 A 250 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 30 A IGBT with anti-parallel diode in TO-247 package
Datasheet
81In Stock
3.360On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 60 A 188 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBTs 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package
Datasheet
5In Stock
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
6In Stock
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package
Datasheet
22In Stock
480Expected 10/1/2026
Min.: 1
Mult.: 1

IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 75 A IGBT7 S7 in TO247PLUS-3pin package
Datasheet
120In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 154 A 630 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
1.200Expected 1/28/2027
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package
Datasheet
1.585On Order
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube

Infineon Technologies IGBTs 1200 V, 40 A IGBT7 S7 with anti-parallel diode in TO-247 package
Datasheet
3.119Expected 1/7/2027
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.65 V - 20 V, 20 V 82 A 357 W - 40 C + 175 C IGBT7 S7 Tube
Infineon Technologies IGBTs 650 V, 50 A IGBT with anti-parallel diode in TO-247 package
Datasheet
1.206On Order
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.35 V - 20 V, 20 V 80 A 273 W - 40 C + 175 C IGBT7 T7 Tube
Infineon Technologies IGBTs 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
Datasheet
460Expected 10/1/2026
Min.: 1
Mult.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
240Expected 11/5/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 427 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package
Datasheet
210Expected 11/12/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 100 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
240Expected 10/29/2026
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 140 A 429 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBTs 650 V, 75 A IGBT with anti-parallel diode in TO247-4 package
Datasheet
240Expected 3/18/2027
Min.: 1
Mult.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 338 W - 40 C + 175 C IGBT7 H7 Tube