GaNEXUS™ GaN FETs

onsemi GaNEXUS™ Gallium Nitride Field-Effect Transistors (GaN FETs) use wide-bandgap material properties of GaN to deliver fast switching, low gate and output charge, and enhanced efficiency compared to silicon power transistors. These features enable higher operating frequencies, increased power density, and reduced magnetics in power conversion applications across low-, medium-, high-, and ultra-high voltages. The enhancement-mode discrete GaN high-electron-mobility transistors (HEMTs) offer a voltage range from 40V to 650V, including 650V GaNEXUS Smart GaN FETs with integrated protections to improve reliability and simplify system integration. Ideal applications for the onsemi GaNEXUS family include industrial automation, robotics, AI data centers, automotive electrification, and energy infrastructure.

Results: 11
Select Image Part # Mfr. Description Datasheet Availability Pricing (CLP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Technology
onsemi GaN FETs GaN FET, 700V, 75m, DPAK 2.440In Stock
Cut Tape
$3.162
$2.031
$1.383
Reel
$1.383
Min.: 1
Mult.: 1
Max.: 250
: 250
SMD/SMT DPAK-3 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 105 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V, 75m, 8x8 2.463In Stock
Cut Tape
$3.283
$2.119
$1.460
Reel
$1.460
Min.: 1
Mult.: 1
Max.: 246
: 250
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 21 A 100 mOhms - 6 V, + 7 V 2.5 V 3.8 nC - 55 C + 150 C 111 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V,101m, 8x8 2.472In Stock
Cut Tape
$2.997
$1.932
$1.329
Reel
$1.329
Min.: 1
Mult.: 1
Max.: 248
: 250
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 16 A 130 mOhms - 6 V, + 7 V 2.5 V 2.65 nC - 55 C + 150 C 84 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V, 132m, 8x8 2.500In Stock
Cut Tape
$1.669
$1.109
$919
Reel
$919
Min.: 1
Mult.: 1
Max.: 250
: 250
SMD/SMT DFN-9 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 69 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaN FET, 700V, 132m, DPAK 2.488In Stock
Cut Tape
$2.251
$1.438
$967
Reel
$967
Min.: 1
Mult.: 1
Max.: 249
: 250
SMD/SMT PDSO-E3 N-Channel 1 Channel 700 V 12 A 170 mOhms - 6 V, + 7 V 2.5 V 2.1 nC - 55 C + 150 C 64 W Enhancement GaNEXUS GaN
onsemi GaN FETs 650V, 35MR LGAN TOLL
2.400Expected 10/19/2026
Cut Tape
$16.645
$9.816
Reel
$9.212
Min.: 1
Mult.: 1
: 1.200
SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 21 nC - 55 C + 150 C 367 W Enhancement GaN
onsemi GaN FETs 650V, 35MR LGAN TOLT
2.400Expected 11/9/2026
Cut Tape
$16.645
$9.816
Reel
$9.212
Min.: 1
Mult.: 1
: 1.200
SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 64 A 27 mOhms - 6 V, + 7 V 1.5 V 16 nC - 55 C + 150 C 462 W Enhancement GaN
onsemi GaN FETs 650V, 50MR LGAN TOLL
2.400Expected 10/19/2026
Cut Tape
$12.517
$9.058
$7.543
$6.719
Reel
$5.709
Min.: 1
Mult.: 1
: 1.200
SMD/SMT PDSO-F9 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.6 nC - 55 C + 150 C 250 W Enhancement GaN
onsemi GaN FETs 650V, 50MR LGAN TOLT
2.400Expected 10/22/2026
Cut Tape
$12.517
$9.058
$7.543
$6.719
Reel
$5.808
Min.: 1
Mult.: 1
: 1.200
SMD/SMT PDSO-G16 HEMT 1 Channel 650 V 40 A 39 mOhms - 6 V, + 7 V 1.5 V 10.9 nC - 55 C + 150 C 312 W Enhancement GaN
onsemi GaN FETs GaNEXUS FET, 100V, 2.7m, 3.3x3.3 Dual Cool
2.500Expected 10/19/2026
Cut Tape
$6.214
$4.073
$2.997
Reel
$2.997
Min.: 1
Mult.: 1
Max.: 250
: 2.500
SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 183 A 2.7 mOhms - 4 V to 6 V 2.1 V 7.3 nC - 40 C + 150 C 250 W Enhancement GaNEXUS GaN
onsemi GaN FETs GaNEXUS FET, 100V, 3.8m, 3.3x3.3 Dual Cool
2.500Expected 10/19/2026
Cut Tape
$4.436
$2.910
$2.163
Reel
$2.163
Min.: 1
Mult.: 1
Max.: 250
: 2.500
SMD/SMT PTFP-N9 N-Channel 1 Channel 100 V 146 A 3.8 mOhms - 4 V to 6 V 5.2 nC - 40 C + 150 C 208 W Enhancement GaNEXUS GaN