GRFx GaN HEMT Power Transistors

Guerrilla RF GRFx GaN HEMT Power Transistors are unmatched discrete GaN-on-SiC HEMT power transistors designed for high-performance RF applications. These transistors operate across a wide frequency range of DC to 6GHz, 7GHz, and 8GHz with an operating drain voltage of 28V and 50V. The GRFx transistors support both linear and pulsed modes and are 100% DC, and RF production tested. These transistors are housed in a compact, industry-standard 3mm x 3mm QFN-16 surface mount package, are lead-free, and RoHS compliant. Typical applications include cellular infrastructure, radar systems, communications, and test instrumentation.

Resultados: 3
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS
Guerrilla RF Amplificador de RF Unmatched Discrete GaN-on-SiC HEMT 50W PSAT at 50V or 25W PSAT at 28V 29En existencias
Cinta cortada
$110.377
$92.316
Envase tipo carrete
$85.080
$82.841
Min.: 1
Mult.: 1
: 50
Guerrilla RF GaN FETs Unmatched Discrete GaN-on-SiC HEMT 30W PSAT at 50V or 19W PSAT at 28V 25En existencias
Cinta cortada
$174.223
$165.484
Envase tipo carrete
$165.484
Ver
Min.: 1
Mult.: 1
: 50
Guerrilla RF GaN FETs Unmatched Discrete GaN-on-SiC HEMT 15W PSAT at 50V or 8W PSAT at 28V 39En existencias
Cinta cortada
$157.227
$149.333
Envase tipo carrete
$149.333
Ver
Min.: 1
Mult.: 1
: 50