1200V SiC MOSFETs

Nexperia 1200V SiC MOSFETs are housed in QDPAK (top-side cooled) packaging and are designed for automotive and industrial power conversion systems requiring high efficiency, high power density, and robust thermal performance. These devices combine SiC switching performance with a top-side cooled package architecture, providing a direct die-to-heatsink thermal path. This reduces dependence on PCB heat spreading and supports simpler, more effective cooling concepts in compact designs. Typical applications include EV onboard chargers, DC-DC converters, traction and auxiliary inverters, EV charging infrastructure, renewable energy systems, and high-power AC-DC/DC-DC conversion.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (CLP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package / Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Nexperia SiC MOSFETs NSF017120T1A0/SOT8114/QDPAK 195In Stock
Cut Tape
$24.164
$18.046
$15.608
$15.221
Reel
$13.968
Min.: 1
Mult.: 1
: 800
SMD/SMT QDPAK-22 1 Channel 1.2 kV 111 A 26 mOhms - 10 V, + 22 V 2.9 V 196 nC - 55 C + 175 C 469 W Enhancement
Nexperia SiC MOSFETs NSF040120L3A0/SOT429-2/TO247-3 202In Stock
$18.593
$16.201
$8.214
$7.781
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 66 A 60 mOhms - 10 V, + 22 V 2.9 V 84 nC - 55 C + 175 C 319 W Enhancement
Nexperia SiC MOSFETs NSF080120L3A0/SOT429-2/TO247-3 83In Stock
$10.151
$5.537
$4.705
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 36 A 120 mOhms - 10 V, + 22 V 2.9 V 44 nC - 55 C + 175 C 202 W Enhancement
Nexperia SiC MOSFETs NSF040120L4A1/SOT8071/TO247-4L
445Expected 11/23/2026
Cut Tape
$12.976
$9.388
Reel
$9.388
$7.815
$6.961
$6.517
Min.: 1
Mult.: 1
: 30
Through Hole TO-247-4 1 Channel 1.2 kV 53 A 60 mOhms - 10 V, + 22 V 2.9 V 81 nC - 55 C + 175 C 234 W Enhancement