30V Single N-Channel Power MOSFETs

Taiwan Semiconductor 30V Single N-Channel Power MOSFETs feature a low RDS(ON) (drain-source on-state resistance), which minimizes conductive losses. These devices also feature a low gate charge for fast switching. These N-Channel Power MOSFETs are ideal for battery power management, load switching, motor control, and DC-DC converter applications.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (CLP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Packaging
Taiwan Semiconductor MOSFETs 30V, 90A, Single N-Channel Power MOSFET 2.489In Stock
Cut Tape
$1.603
$750
$666
$520
Reel
$422
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 90 A 5.2 mOhms 20 V 2.5 V 41 nC - 55 C + 175 C 83 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 30V, 59A, Single N-Channel Power MOSFET 2.439In Stock
Cut Tape
$1.340
$619
$549
$426
Reel
$341
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 59 A 8 mOhms 20 V 2.5 V 20 nC - 55 C + 175 C 55.6 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 30V, 194A, Single N-Channel Power MOSFET 826In Stock
Cut Tape
$2.844
$1.394
$1.252
$1.001
Reel
$913
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 194 A 1.8 mOhms 20 V 2.5 V 120 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel