TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Resultados: 12
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Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Estilo de montaje
Paquete / Cubierta
If - Corriente directa
Vrrm - Tensión inversa repetitiva
Vf - Tensión directa
Ifsm - Sobrecorriente en sentido directo
Ir - Corriente inversa
Empaquetado
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A DFN8x8
Hoja de datos
2.134En existencias
Cinta cortada
$3.524
$1.899
$1.559
$1.471
Envase tipo carrete
$1.142
$1.109
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A DFN8x8
Hoja de datos
6.822En existencias
Cinta cortada
$2.558
$1.241
$1.120
$1.072
Envase tipo carrete
$1.072
$742
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A DFN8x8
Hoja de datos
4.799En existencias
Cinta cortada
$3.030
$1.493
$1.340
$1.241
Envase tipo carrete
$1.241
$933
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A DFN8x8
Hoja de datos
1.933En existencias
Cinta cortada
$3.854
$2.163
$1.768
$1.713
Envase tipo carrete
$1.285
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 3A TO-220-2L
Hoja de datos
1En existencias
$2.789
$1.625
$1.006
$929
Min.: 1
Mult.: 1
Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A DFN8x8
Hoja de datos
1.298En existencias
Cinta cortada
$4.194
$2.448
$1.998
$1.943
Envase tipo carrete
$1.943
$1.460
Min.: 1
Mult.: 1
: 2.500
SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A TO-220-2L
Hoja de datos
50En existencias
$3.821
$1.921
$1.845
$1.394
Ver
Min.: 1
Mult.: 1
Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A TO-220-2L
Hoja de datos
63En existencias
150Se espera el 16-10-2026
$4.183
$2.536
$2.108
Min.: 1
Mult.: 1
Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A TO-220-2L
Hoja de datos
208En existencias
$2.558
$1.241
$1.230
$1.063
Min.: 1
Mult.: 1
Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A TO-220-2L
Hoja de datos
127En existencias
$3.019
$1.482
$1.471
$1.340
Min.: 1
Mult.: 1
Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A TO-220-2L
Hoja de datos
21En existencias
$3.634
$1.801
$1.614
$1.603
Min.: 1
Mult.: 1
Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 2A TO-220-2L
Hoja de datos
172En pedido
$2.426
$1.241
$884
$805
Min.: 1
Mult.: 1
Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube