El/los Semiconductores discretos más reciente(s)

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Tipos de Semiconductores discretos

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Fabricante = STMicroelectronics Regrese a la ficha de Productos para modificar sus filtros actuales.

STMicroelectronics STL059N4S8AG Power MOSFET

03-31-2026

- A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor

12-04-2025

- E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.

STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor

11-07-2025

- Built on GaN technology and designed for demanding power conversion applications.

STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor

10-28-2025

- E-Mode PowerGaN transistor optimized for efficient power conversion in demanding applications.

STMicroelectronics M2TP80M12W2-2LA Automotive Power Module

09-26-2025

- Offers a 3-phase 4-wire PFC topology with integrated NTC for the OBC in hybrid & electric vehicles.

STMicroelectronics M2P45M12W2-1LA Automotive Power Module

09-26-2025

- Offers a six-pack topology with NTC for the DC/DC converter stage of the OBC in electric vehicles.

STMicroelectronics STGWA30IH160DF2 1600V IH2 Series IGBT

05-22-2025

- Created by implementing an advanced proprietary trench gate field-stop structure.

STMicroelectronics ESDAxWY Automotive Unidirectional ESD Protection

01-10-2025

- TVS designed to protect sensitive electronics in harsh environments.

STMicroelectronics TN8050H-12WL High Temperature SCR Thyristor

01-01-2025

- Suitable for industrial applications that require high immunity with lower gate current.

STMicroelectronics STGSH50M120D ACEPACK SMIT IGBT with Diode

12-24-2024

- Combines two IGBTs and diodes in a half-bridge topology.

STMicroelectronics ESDZX168B-1BF4 Bidirectional Single Line TVS Diode

10-14-2024

- The device is designed to protect data lines or other I/O ports against ESD transients.

STMicroelectronics STTH120RQ06-M2Y 600V Ultra-Fast Bridge Module

10-08-2024

- Suited for use in charger applications, either integrated into the vehicle or in a charging station.

STMicroelectronics STGWA30M65DF2AG Automotive-Grade IGBT

09-12-2024

- Designed using an advanced proprietary trench gate field stop structure.

STMicroelectronics STGHU30M65DF2AG Automotive-Grade IGBT

09-12-2024

- Developed using an advanced trench gate field stop structure.

STMicroelectronics ESDA5WY Automotive Unidirectional ESD Protection

09-10-2024

- Automotive unidirectional transient voltage suppressor (TVS) developed for harsh environments.

STMicroelectronics STBR3012L2Y-TR Automotive High Voltage Rectifier

08-09-2024

- High-quality design with consistently reproducible characteristics and intrinsic ruggedness.

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs

07-22-2024

- 800V, Zener-protected, 100% avalanche tested, and ideal for flyback converters and LED lighting.

STMicroelectronics GWA40MS120DF4AG Automotive-grade MS Series IGBT

07-03-2024

- 1200V, 40A, low-loss, offers low thermal resistance, and comes in a TO-247 long leads package.

STMicroelectronics STripFET F8 N-Channel Power MOSFETs

12-01-2023

- AEC-Q101 qualified and offers a comprehensive package solution from 30V to 150V.

STMicroelectronics STGD4H60DF 600V 4A High-Speed H Series IGBT

10-31-2023

- Designed with an advanced trench gate field-stop structure.

STMicroelectronics M1F45M12W2-1LA ACEPACK DMT‑32 Power Module

10-19-2023

- Designed for hybrid and electric vehicles' DC/DC converter stage.

STMicroelectronics STP80N1K1K6 N-Channel Power MOSFET

10-01-2023

- Uses MDmesh K6 technology, leveraging 20 years of experience in super junction technology.

STMicroelectronics SH63N65DM6AG Power MOSFET

08-18-2023

- Automotive-grade N-channel MDmesh DM6 half‑bridge topology power MOSFET with 650V blocking voltage.

STMicroelectronics STPSTxH100/Y Trench Power Schottky Diodes

06-29-2023

- Meets efficiency requirements at high switching frequencies.

STMicroelectronics STL120N10F8 100V N-Channel STripFET MOSFET

05-08-2023

- The device utilizes ST's STripFET F8 technology featuring an enhanced trench gate structure.

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Diotec Semiconductor BAS70-05W Schottky Diode

04-16-2026

- Designed for high‑speed switching and voltage clamping in space‑constrained applications.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04-14-2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

ROHM Semiconductor High-Density SiC Power Modules

04-10-2026

- TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.

Vishay Rectificadores de recuperación rápida RS07x

04-07-2026

- Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.

Vishay Rectificadores de alto voltaje de recuperación estándar S07x-M

04-07-2026

- Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

04-07-2026

- Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.

onsemi NTMFD0D9N02P1E MOSFET

04-06-2026

- Dual N-channel MOSFET designed with low Rg for fast switching applications.

Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes

04-02-2026

- High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.

Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes

04-02-2026

- AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.

Vishay Módulo MOSFET de potencia VS-HOT200C080 de 200 A a 80 V

04-02-2026

- This device reduces board space requirements by up to 15% compared to standard discrete solutions.

Toshiba N-Channel/P-Channel Power MOSFETs

03-31-2026

- Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.

STMicroelectronics STL059N4S8AG Power MOSFET

03-31-2026

- A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.

Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs

03-27-2026

- Application-optimized performance, enabling peak performance for data centers, servers, & AI.

Infineon Technologies OptiMOS™ 6 60V Power MOSFETs

03-27-2026

- Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.

Infineon Technologies Multi-Purpose Diodes for ESD Protection

03-27-2026

- Offering the best protection in a small footprint, the diodes deliver superior ESD performance.

RECOM Power RVS002 Micropower Isolated Power Bridge Rectifier

03-24-2026

- Designed for micro-power isolated power supply applications in space-constrained environments.

iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

03-24-2026

- Delivers ultra-low conduction and switching losses in a robust TO-220 package.

Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)

03-20-2026

- 650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.

Vishay XFD11K XClampR® Transient Voltage Suppressors

03-18-2026

- Surface-mount bidirectional devices designed for high-temperature stability and high reliability.

Vishay T3KN12CA thru T3KN100CA PAR® TVS

03-18-2026

- TVSs are bidirectional, 3000W peak-pulse-power devices ideal for automated placement.

ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules

03-17-2026

- Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.

Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches

03-17-2026

- These devices are a great fit for serving as battery disconnect switches in various applications.

Infineon Technologies OptiMOS™ 8 Power MOSFETs

03-17-2026

- These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

03-13-2026

- Designed for compact and efficient designs, including high thermal performance.

Diodes Incorporated DTHP60B07PT 60A Hyper-Fast Planar Rectifiers

03-13-2026

- Features a 650V reverse voltage, low forward voltage drop, and ultra-fast reverse recovery time.

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