MMDT5551HE3 Dual NPN Transistor
Micro Commercial Components (MCC) MMDT5551HE3 Dual NPN Transistor is an AEC-Q101 qualified small-signal Bipolar Junction Transistor (BJT) with a 600mA collector current. This BJT features a 180V collector-base voltage, 160V collector-emitter voltage, 6V emitter-base voltage, 200mA collector power dissipation and comes in a SOT-363 package. The MMDT5551HE3 transistor also features a 6pF maximum output capacitance, 300MHz maximum transition frequency, and a -55°C to 150°C operating junction temperature range. This BJT adheres to Moisture Sensitivity Level 1 (MSL 1), and the epoxy meets the UL 94V-0 flammability rating. The MMDT5551HE3 transistor is lead-free, halogen-free, and RoHS-compliant.
NO SE HALLARON RESULTADOS..
Intente modificar su término de búsqueda a continuación, o visite nuestro Centro de ayuda.
Intente modificar su término de búsqueda a continuación, o visite nuestro Centro de ayuda.
Sugerencias de búsqueda
- Comprobar que el número del componente o las palabras clave estén escritas correctamente
- Use menos palabras clave o palabras distintas
- Busque 1 número de componente cada vez
- Aplique 1 filtro cada vez
