IR2114SSTRPBF
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Fabricante:
Descripción:
Controladores de puertas 600V Hlf Brdg Drvr IC for Pwr Swtch App
En existencias: 1.939
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Existencias:
-
1.939 Se puede enviar inmediatamenteSe ha producido un error inesperado. Vuelva a intentarlo más tarde.
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Plazo de entrega de fábrica:
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20 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Precio (CLP)
| Cantidad | Precio unitario |
Precio ext.
|
|---|---|---|
| Cinta cortada / MouseReel™ | ||
| $4.540 | $4.540 | |
| $3.456 | $34.560 | |
| $3.181 | $79.525 | |
| $2.885 | $288.500 | |
| $2.738 | $684.500 | |
| $2.659 | $1.329.500 | |
| $2.580 | $2.580.000 | |
| Envase tipo carrete completo (pedir en múltiplos de 2000) | ||
| $2.521 | $5.042.000 | |
Embalaje alternativo
Hoja de datos
Application Notes
- Buffer Interface with Negative Gate Bias for Desat Protected HVICs used in High Power Applications (PDF)
- Gate Drive Characteristics and Requirements for HEXFET® power MOSFETs (PDF)
- HV Floating MOS Gate Drivers (PDF)
- Understanding HVIC Datasheet Specifications (PDF)
- Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs (PDF)
Product Catalogs
Technical Resources
- Design Tip - Using Monolithic High Voltage Gate Drivers (PDF)
- High Current Buffer for Control IC's (PDF)
- Low Gate Charge HEXFETS simplify Gate Drive and Lower Cost (PDF)
- Managing Transients in Control IC Driven Power Stages (PDF)
- PWM Control Methods Increases Efficiency and Reliability; Extends Battery Charge-cycle Time (PDF)
- Short-Circuit Protection for Power Inverters (PDF)
- Using Control ICs to Generate Neg. Gate Bias for MOSFETs & IGBTs (PDF)
- CNHTS:
- 8542319090
- CAHTS:
- 8542310000
- USHTS:
- 8542310030
- KRHTS:
- 8542311000
- TARIC:
- 8542319000
- MXHTS:
- 8542310302
- ECCN:
- EAR99
Chile
