HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Tipo de producto
Tecnología
Estilo de montaje
Paquete / Cubierta
Polaridad del transistor
STMicroelectronics MOSFETs de SiC Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
Hoja de datos
2.311En existencias
MouseReel Disponible
Min.: 1
Mult.: 1
: 3.000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
Hoja de datos
783En existencias
MouseReel Disponible
Min.: 1
Mult.: 1
: 1.000

IGBT Transistors Si SMD/SMT
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
Hoja de datos
831En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P-3
STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Hoja de datos
485En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac
Hoja de datos
564En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT
Hoja de datos
214En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gte FieldStop IGBT 650V 80A
Hoja de datos
3.919En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Hoja de datos
388En existencias
1.000Se espera el 27-07-2026
MouseReel Disponible
Min.: 1
Mult.: 1
: 1.000

IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics IGBTs Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT
Hoja de datos
261En existencias
MouseReel Disponible
Min.: 1
Mult.: 1
: 1.000

IGBT Transistors Si SMD/SMT H2PAK-2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Hoja de datos
60En existencias
600Se espera el 24-08-2026
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 40A trench gate field-stop IGBT
Hoja de datos
1.100En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 30 A, high speed HB2 series IGBT in a TO-247 long
Hoja de datos
402En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Hoja de datos
309En existencias
600Se espera el 14-09-2026
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Hoja de datos
493En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3

STMicroelectronics IGBTs Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Hoja de datos
571En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
Hoja de datos
464En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGBT
Hoja de datos
147En existencias
600Se espera el 01-07-2026
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs Trench gate H series 650V 80A HiSpd
Hoja de datos
30En existencias
300Se espera el 01-07-2026
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBTs 600V 60A trench gate field-stop IGBT
Hoja de datos
1.677Se espera el 15-07-2026
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3


STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Hoja de datos
280En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-3PF
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
Hoja de datos
42En existencias
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-4
STMicroelectronics IGBTs 650V 40A Trench Gate Field-Stop IGBT
Hoja de datos
600Se espera el 10-08-2026
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 600V 20A Hi Spd TrenchGate FieldStop
Hoja de datos
Plazo de entrega no en existencias 14 Semanas
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs 650V 60A Trench Gate Field-Stop IGBT
Hoja de datos
Plazo de entrega 14 Semanas
Min.: 1
Mult.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
Hoja de datos
Plazo de entrega no en existencias 14 Semanas
Min.: 600
Mult.: 600

IGBT Transistors Si Through Hole TO-247-3