Zener-Protected SuperMESH3 Power MOSFETs

STMicroelectronics Zener-Protected SuperMESH3™ Power MOSFETs are created through increased fine-tuning of STMicroelectronic's strip-based PowerMESH™ layout, combined with optimization of the vertical structure. In addition to significantly reducing ON-resistance, special attention has been taken to ensure these MOSFETs offer dynamic performance with a large avalanche capability. STMicroelectronics Zener-Protected SuperMESH3 Power MOSFETs are offered in voltages up to 1200V. Applications include switch-mode low-power supplies (SMPS), DC-DC converters, switching, and offline power supplies.

Resultados: 40
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (CLP) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial Empaquetado
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V 6.3 A DPAK 3.759En existencias
Cinta cortada
$2.586
$1.641
$1.105
$895
Envase tipo carrete
$750
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 525 V 6 A 850 mOhms 30 V 3 V 33 nC - 55 C + 150 C 90 W Enhancement MDmesh Reel, Cut Tape, MouseReel

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A 1.100En existencias
$10.584
$7.223
$5.958
$5.024
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 10 A 680 mOhms 30 V 4 V 51 nC - 55 C + 150 C 190 W Enhancement SuperMESH Tube

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp 571En existencias
$8.442
$4.420
$4.056
$3.737
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 7.2 A 1.35 Ohms 30 V 3 V 34 nC - 55 C + 150 C 150 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH 3 2.749En existencias
Cinta cortada
$2.541
$1.230
$1.099
$875
$815
Envase tipo carrete
$731
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 620 V 2.2 A 3.6 Ohms 30 V 3 V 15 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V, 2.7A SuperMESH Mosfet 7.655En existencias
Cinta cortada
$1.891
$897
$690
$568
Envase tipo carrete
$499
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 620 V 2.7 A 2.5 Ohms 30 V 3 V 13 nC - 55 C + 150 C 45 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 950 VDSS <3.5 RDS 4A ID 90W Pw 6.491En existencias
Cinta cortada
$3.839
$2.324
$1.994
$1.743
$1.709
Envase tipo carrete
$1.641
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 950 V 4 A 3 Ohms 30 V 3 V 19 nC - 55 C + 150 C 90 W Enhancement SuperMESH Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.28 Ohm SuperMESH3 4.3A 1.691En existencias
Cinta cortada
$2.165
$1.032
$923
$729
Envase tipo carrete
$588
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 620 V 4.2 A 1.6 Ohms 30 V 3 V 26 nC - 55 C + 150 C 70 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 0.68 Ohm 10A SuperMESH3 956En existencias
$9.205
$4.979
$4.568
$4.193
$3.976
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 10 A 850 mOhms 30 V 3 V 51 nC - 55 C + 150 C 40 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-2.2ohms 2.7A 2.988En existencias
$2.415
$1.120
$1.020
$836
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 620 V 2.7 A 2.5 Ohms 30 V 3 V 13 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A 364En existencias
$9.878
$5.457
$5.024
$4.455
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 10 A 680 mOhms 30 V 4 V 51 nC - 55 C + 150 C 190 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 963En existencias
$3.589
$2.336
$1.606
$1.344
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 3.8 A 2 Ohms 30 V 3 V 22 nC - 55 C + 150 C 25 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH3 1.741En existencias
$2.860
$1.811
$1.230
$989
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 2.2 A 3.6 Ohms 30 V 3 V 15 nC - 55 C + 150 C 20 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22 976En existencias
$3.293
$2.119
$1.447
$1.230
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 8.4 A 680 mOhms 30 V 3 V 42 nC - 55 C + 150 C 30 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 1000 Volt 3.5A Zener SuperMESH 2.856En existencias
$6.551
$3.931
$3.030
$2.711
$2.506
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 3.5 A 3.7 Ohms 30 V 3 V 42 nC - 55 C + 150 C 125 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-1.1ohms 5.5A 2.220En existencias
$3.384
$1.618
$1.458
$1.219
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 620 V 5.5 A 1.28 Ohms 30 V 3 V 34 nC - 55 C + 150 C 90 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package 496En existencias
$10.880
$6.004
$5.537
$5.036
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2 Ohms 30 V 3 V 13.7 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3 1.246En existencias
Cinta cortada
$2.506
$1.299
$1.032
$819
Envase tipo carrete
$630
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 525 V 4.4 A 1.2 Ohms 30 V 3 V 17 nC - 55 C + 150 C 70 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 525 V MDMesh 330En existencias
Cinta cortada
$2.449
$1.287
$1.009
$779
$753
Envase tipo carrete
$620
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 525 V 5 A 1 Ohms 30 V 3 V 26 nC - 55 C + 150 C 70 W Enhancement MDmesh Reel, Cut Tape, MouseReel
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-2.2ohms 2.7A 996En existencias
$1.937
$919
$819
$645
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 620 V 2.7 A 2.5 Ohms 30 V 3 V 13 nC - 55 C + 150 C 45 W Enhancement MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 503En existencias
$2.324
$1.196
$971
$767
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 525 V 2.5 A 2.1 Ohms 30 V 3.75 V 11 nC 20 W MDmesh Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp 143En existencias
$5.115
$2.620
$2.598
$2.176
$1.903
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 950 V 7.2 A 1.35 Ohms 30 V 3 V 34 nC - 55 C + 150 C 150 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3 1.891En existencias
$2.655
$1.447
$1.196
$967
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-251-3 N-Channel 1 Channel 620 V 3.8 A 2 Ohms 30 V 3 V 22 nC - 55 C + 150 C 70 W Enhancement SuperMESH Tube

STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 1000 Volt 3.5 A Zener SuperMESH 8En existencias
600Se espera el 12-02-2027
$6.779
$4.443
$3.270
$2.917
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 3.5 A 2.7 Ohms 30 V 3 V 42 nC - 55 C + 150 C 125 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 1000 Volt 3.5A Zener SuperMESH
8.996En pedido
$6.756
$3.543
$3.236
$2.768
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 1 kV 3.5 A 3.7 Ohms 30 V 3 V 42 nC - 55 C + 150 C 125 W Enhancement SuperMESH Tube
STMicroelectronics Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 26En existencias
Cinta cortada
$3.167
$1.686
$1.401
$1.137
Envase tipo carrete
$1.017
Ver
Min.: 1
Mult.: 1
: 2.500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 620 V 3.8 A 1.95 Ohms 30 V 4.5 V 14 nC - 55 C + 150 C 70 W Enhancement MDmesh Reel, Cut Tape, MouseReel