VSMY1850

Vishay Semiconductors
782-VSMY1850
VSMY1850

Fabricante:

Descripción:
Emisores infrarrojos SurflightVCSEL 850nm 10mW/sr, +/-60deg.

Modelo ECAD:
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En existencias: 6.067

Existencias:
6.067 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
4 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-
Precio ext.:
$-
Est. Tarifa:
Empaque:
Envase tipo carrete completo (pedir en múltiplos de 3000)

Precio (CLP)

Cantidad Precio unitario
Precio ext.
Cinta cortada / MouseReel™
$1.355 $1.355
$946 $9.460
$703 $70.300
$596 $298.000
$561 $561.000
Envase tipo carrete completo (pedir en múltiplos de 3000)
$468 $1.404.000
$454 $2.724.000
$431 $3.879.000
$424 $10.176.000
† $5.000 Se agregará y calculará la tarifa de MouseReel™ en su carrito de compras. Ningún artículo de MouseReel™ se puede cancelar ni devolver.

Atributo del producto Valor de atributo Seleccionar atributo
Vishay
Categoría de producto: Emisores infrarrojos
RoHS:  
SMD/SMT
850 nm
85 mW/sr
60 deg
100 mA
2.9 V
50 mW
- 40 C
+ 85 C
Reel
Cut Tape
MouseReel
Marca: Vishay Semiconductors
Tiempo de caída: 10 ns
Color de iluminación: Infrared
Forma de lentes: Rectangular
Sensibles a la humedad: Yes
Tipo de producto: IR Emitters (IR LEDs)
Tiempo de subida: 10 ns
Cantidad de empaque de fábrica: 3000
Subcategoría: Infrared Data Communications
Nombre comercial: SurfLight
Peso de la unidad: 85 mg
Productos encontrados:
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Atributos seleccionados: 0

CAHTS:
8541410000
USHTS:
8541410000
JPHTS:
854141000
TARIC:
8541410000
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

VSMY1850 High-Speed IR Emitting Diodes

Vishay Semiconductors VSMY1850 High-Speed IR Emitting Diodes provide a peak wavelength of 850nm based on GaAlAs surface emitter chip technology. These diodes feature high radiant intensity, high speed, and high optical power. The VSMY1850 modules are molded in clear and untinted 0805 plastic packages for surface mounting. Vishay Semiconductors VSMY1850 High-Speed IR Emitting Diodes are well-suited for applications such as IrDA-compatible data transmissions, miniature light barriers, photo interrupters, optical switches, 3D TVs, and more.

VSMY High Speed IR Emitting Diodes

Vishay Semiconductors VSMY High Speed IR Emitting Diodes are infrared, 850nm-emitting diodes based on surface emitter technology with high radiant intensity, high optical power, and high speed. Vishay Semiconductors VSMY Series High-Speed IR Emitting Diodes come in four package forms, the PLCC-2, Gull Wing, Reverse Gull Wing, and 0805, all but the first of which are molded in clear, untinted plastic packages. All of these diodes are designed for surface mounting and are suitable for high pulse current operation.

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.