IDH04G65C5XKSA2

Infineon Technologies
726-IDH04G65C5XKSA2
IDH04G65C5XKSA2

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Descripción:
Diodos Schottky de SiC SIC DIODES

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En existencias: 2.693

Existencias:
2.693 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
17 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-
Precio ext.:
$-
Est. Tarifa:

Precio (CLP)

Cantidad Precio unitario
Precio ext.
$2.576 $2.576
$1.266 $12.660
$1.120 $112.000
$739 $369.500
$718 $3.590.000
$711 $7.110.000
25.000 Presupuesto

Atributo del producto Valor de atributo Seleccionar atributo
Infineon
Categoría de producto: Diodos Schottky de SiC
RoHS:  
Through Hole
TO-220-2
Single
4 A
650 V
1.5 V
38 A
200 nA
- 55 C
+ 175 C
XDH04G65
Tube
Marca: Infineon Technologies
Dp - Disipación de potencia : 48 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 500
Subcategoría: Diodes & Rectifiers
Nombre comercial: CoolSiC
Vr - Tensión inversa: 650 V
Alias de las piezas n.º: IDH04G65C5 SP001632402
Peso de la unidad: 2 g
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Atributos seleccionados: 0

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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Generation 5 CoolSiC™ 650V Schottky Diodes

Infineon Generation 5 CoolSiC™ 650V Schottky Diodes deliver market-leading efficiency at an attractive cost point. Infineon’s proprietary diffusion soldering process, already introduced with Generation 3, is now combined with a new, more compact design as well as the latest advancements in thin wafer technology, bringing improved thermal characteristics and lower Figures of Merit (Qc x Vf).

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

CoolSiC™ Schottky Diodes

Infineon CoolSiC™ Schottky Diodes provide a relatively high on-state resistance and leakage current. In SiC material, Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of SiC Schottky products covers 600V and 650V to 1200V Schottky diodes. Combining a fast silicon-based switch with a CoolSiC™ Schottky diode is often termed a “hybrid” solution. In recent years, Infineon has manufactured several millions of hybrid modules and has seen them installed in various customer products in applications like solar and uninterruptible power supplies (UPS).

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