FFSP08120A

onsemi
512-FFSP08120A
FFSP08120A

Fabricante:

Descripción:
Diodos Schottky de SiC 1200V SiC SBD 8A

Hoja de datos:
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En existencias: 760

Existencias:
760 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
12 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-
Precio ext.:
$-
Est. Tarifa:

Precio (CLP)

Cantidad Precio unitario
Precio ext.
$8.030 $8.030
$4.312 $43.120
$3.942 $394.200
$3.696 $1.848.000

Atributo del producto Valor de atributo Seleccionar atributo
onsemi
Categoría de producto: Diodos Schottky de SiC
RoHS:  
Through Hole
TO-220-2
Single
8 A
1.2 kV
1.45 V
68 A
200 uA
- 55 C
+ 175 C
FFSP08120A
Tube
Marca: onsemi
Dp - Disipación de potencia : 166 W
Tipo de producto: SiC Schottky Diodes
Cantidad de empaque de fábrica: 50
Subcategoría: Diodes & Rectifiers
Nombre comercial: EliteSiC
Vr - Tensión inversa: 1.2 kV
Peso de la unidad: 2,160 g
Productos encontrados:
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Atributos seleccionados: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

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onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

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