NCD57001FDWR2G

onsemi
863-NCD57001FDWR2G
NCD57001FDWR2G

Fabricante:

Descripción:
Controladores de puerta con aislamiento galvánico ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

Modelo ECAD:
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En existencias: 1.738

Existencias:
1.738 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
21 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-
Precio ext.:
$-
Est. Tarifa:

Precio (CLP)

Cantidad Precio unitario
Precio ext.
$6.294 $6.294
$4.245 $42.450
$3.920 $98.000
$3.170 $317.000
$3.046 $761.500
$2.834 $1.417.000
Envase tipo carrete completo (pedir en múltiplos de 1000)
$2.654 $2.654.000
$2.554 $5.108.000

Atributo del producto Valor de atributo Seleccionar atributo
onsemi
Categoría de producto: Controladores de puerta con aislamiento galvánico
RoHS:  
NCD57001FDWR2G
SMD/SMT
- 40 C
+ 125 C
10 ns
15 ns
Reel
Cut Tape
Marca: onsemi
Configuración: Inverting, Non-Inverting
Número de controladores: 1 Driver
Número de salidas: 1 Output
Corriente de salida: 6 A
Producto: IGBT, MOSFET Gate Drivers
Tipo de producto: Galvanically Isolated Gate Drivers
Cantidad de empaque de fábrica: 1000
Subcategoría: PMIC - Power Management ICs
Voltaje de alimentación - Máx.: 5 V
Voltaje de alimentación - Mín.: 3.3 V
Productos encontrados:
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Atributos seleccionados: 0

CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCD57001FDWR2G Isolated IGBT Gate Drivers

onsemi NCD57001FDWR2G Isolated High-Current IGBT Gate Drivers are single-channel IGBT drivers with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate undervoltage lockouts (UVLOs), DESAT protection, and soft turn-off at DESAT. onsemi NCD57001FDWR2G gate drivers accommodate 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. This gate driver provides >5kVrms (UL1577 rating) galvanic isolation and >1200Viorm (working voltage) capabilities. Typical applications include solar inverters, motor control, uninterruptible power supplies (UPS), industrial power supplies, and welding.

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